NDLI: A low-noise and wide-bandwidth InGaAs/InAlAs superlattice APD

Content Provider	IEEE Xplore Digital Library
Author	Kagawa, T. Kawamura, Y. Asai, H. Naganuma, M. Mikami, O.
Copyright Year	1989
Description	Author affiliation: NTT, Kanagawa, Japan (Kagawa, T.; Kawamura, Y.; Asai, H.; Naganuma, M.; Mikami, O.)
Abstract	An InGaAs-InAlAs superlattice avalanche photodiode (APD) was fabricated by MBE (molecular beam epitaxy), and impact ionization rates, excess multiplication noise, and high-frequency response were measured. The electron ionization rate ( alpha ) is enhanced by the large conduction band offset. The ratio of alpha / beta is as large as 29 at an electric field of 2.2*10/sup 5/ V/cm, where beta is the hole ionization rate. As a result of the enhanced ionization rate ratio, the excess multiplication noise is quite small and fits the theoretical curve with an effective ionization rate ratio of 0.05. The 3-dB bandwidth is 4 GHz at a multiplication factor of 16. This shows that the carrier pileup is negligible in a high electric field. The 3-dB bandwidth is limited not by the gain-bandwidth limit but by the electron diffusion time in the photoabsorption layer.<>
Starting Page	725
Ending Page	728
File Size	480563
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74157
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Indium compounds Superlattices Molecular beam epitaxial growth Electrons Bandwidth Avalanche photodiodes Impact ionization Noise measurement Signal to noise ratio
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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