NDLI: A new stack capacitor for polysilicon active matrix arrays (TFTs)

Content Provider	IEEE Xplore Digital Library
Author	Huang, T.-Y. Lewis, A.G. Wu, I.-W. Chiang, A. Bruce, R.H.
Copyright Year	1989
Description	Author affiliation: Xerox Palo Alto Res. Center, CA, USA (Huang, T.-Y.; Lewis, A.G.; Wu, I.-W.; Chiang, A.; Bruce, R.H.)
Abstract	A novel stack capacitor structure is proposed for dynamic data storage in circuits using self-aligned polysilicon thin-film transistor technology. Unlike the conventional planar thick-oxide capacitor formed between the gate-polysilicon storage node and the metal ground line, the stack capacitor is fabricated by adding an island-polysilicon plate underneath the gate-polysilicon storage node, thus creating a sandwiched stack capacitor structure. Owing to the high capacitance per unit area of the thin oxide capacitor, significant savings in chip area can be achieved. The stack capacitor structure has been successfully applied to active matrix arrays using self-aligned polysilicon thin-film transistors as the control switches. Improved data retention and decreased feed-through voltage, characteristic of higher storage capacitance, are demonstrated. The stack capacitor also features high immunity to crosstalk due to its unique surrounding ground plate which serves to screen each individual storage node. The capacitor therefore appears quite attractive for circuit applications which require large (>0.1-pF) capacitance.<>
Starting Page	357
Ending Page	360
File Size	253323
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74297
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitors Thin film transistors Capacitance Transmission line matrix methods Circuits Memory Active matrix technology Switches Voltage Crosstalk
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

New stack capacitor for dynamic data storage in polysilicon active matrix arrays

A New Analog Buffer Using Low-Temperature Polysilicon Thin-Film Transistors for Active-Matrix Displays

Voltage Driving Scheme Using Three TFTs and One Capacitor for Active-Matrix Organic Light-Emitting Diode Pixel Circuits

Active matrix organic light emitting diode pixel design using polysilicon thin film transistors

Innovative Voltage Driving Pixel Circuit Using Organic Thin-Film Transistor for AMOLEDs

Switched-capacitor circuits using polysilicon on quartz thin-film technology

Analysis of current-voltage characteristics in polysilicon TFTs for LCDs

High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric

Degradation of polysilicon TFTs during dynamic stress

A new stack capacitor for polysilicon active matrix arrays (TFTs)

Similar Documents

New stack capacitor for dynamic data storage in polysilicon active matrix arrays

A New Analog Buffer Using Low-Temperature Polysilicon Thin-Film Transistors for Active-Matrix Displays

Voltage Driving Scheme Using Three TFTs and One Capacitor for Active-Matrix Organic Light-Emitting Diode Pixel Circuits

Active matrix organic light emitting diode pixel design using polysilicon thin film transistors

Innovative Voltage Driving Pixel Circuit Using Organic Thin-Film Transistor for AMOLEDs

Switched-capacitor circuits using polysilicon on quartz thin-film technology

Analysis of current-voltage characteristics in polysilicon TFTs for LCDs

High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric

Degradation of polysilicon TFTs during dynamic stress

A new stack capacitor for polysilicon active matrix arrays (TFTs)