NDLI: Electron mobility in Si inversion layers

Content Provider	Scilit
Author	Masaki, K. Taniguchi, K. Hamaguchi, C.
Copyright Year	1992
Description	Journal: Semiconductor Science and Technology Electron mobility in Si inversion layers has been investigated. The effective-field and temperature dependences of the effective mobility are analysed by the model, which is based on the interactions of a two-dimensional electron gas confined in the inversion layer with acoustic phonons, inter-valley phonons, surface roughness and ionized impurities.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/7/3B/151/pdf
Ending Page	B575
Page Count	3
Starting Page	B573
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/7/3b/151
Journal	Semiconductor Science and Technology
Issue Number	3B
Volume Number	7
Language	English
Publisher	IOP Publishing
Publisher Date	1992-03-01
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Microscopic Research Electron Mobility Mobility in Si Si Inversion Layers Field and Temperature Surface Roughness Layers Electron
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Electron mobility in Si inversion layers