NDLI: Future trends for TFT integrated circuits on glass substrates

Content Provider	IEEE Xplore Digital Library
Author	Ohshima, H. Morozumi, S.
Copyright Year	1989
Description	Author affiliation: Seiko Epson Corp., Nagano, Japan (Ohshima, H.; Morozumi, S.)
Abstract	The current status and the future trends of thin-film-transistor (TFT) integrated circuits are discussed following a review of their features. TFT devices have been applied to liquid-crystal displays and linear image sensors, both of which incorporate internally integrated driver circuits. From the viewpoint of TFT advantages, the low-temperature (<600 degrees C) fabrication of TFT circuits is essential to their future progress. The main objective is to realize sufficient electrical characteristics of TFT devices below 600 degrees C, using methods such as MOS interface control, crystalline grain growth, and trap passivation at grain boundaries. This will make it possible to apply TFT circuits not only to much larger substrates but also to concepts such as three-dimensional LSIs.<>
Starting Page	157
Ending Page	160
File Size	269096
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74250
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Glass Substrates Grain boundaries Liquid crystal displays Image sensors Driver circuits Fabrication Electric variables Crystallization
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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