NDLI: Characterization of laser planarized aluminum for submicron double level metal CMOS circuits

Content Provider	IEEE Xplore Digital Library
Author	Pramanik, D. Chen, S.
Copyright Year	1989
Description	Author affiliation: VLSI Technol. Inc., San Jose, CA, USA (Pramanik, D.)
Abstract	A high-power pulsed laser has been used to flow aluminum into vias to provide a planarized surface. It is shown that laser planarization is a viable means of filling high-aspect-ratio vias for submicron geometries and can be used without degrading device performance or reliability. The current carrying capability of laser-annealed metal lines is equal to that of nonannealed lines, showing that they can be reliably used as interconnects in high-performance circuits. A high-density digital CMOS double-metal circuit based on 1 mu m design rules has been fabricated using this technique. The planarity of the Al lines in vias and over steps is excellent compared to that for a standard metal.<>
Starting Page	673
Ending Page	676
File Size	512144
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74369
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum Circuits Optical pulses Temperature Laser ablation Power lasers Annealing Electromigration CMOS process Dielectrics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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