NDLI: A 3dB NF 0.1–6.6GHz inductorless wideband low-noise amplifier in 0.13µm CMOS

Content Provider	IEEE Xplore Digital Library
Author	Asaad Wahba Marzouk, S. Hussien, F.A. Shousha, A.M.
Copyright Year	2014
Description	Author affiliation: Dept. of Electron. & Electr. Commun. Eng., Cairo Univ., Cairo, Egypt (Asaad Wahba Marzouk, S.; Hussien, F.A.; Shousha, A.M.)
Abstract	An inductorless wideband LNA is designed with low NF and high linearity. It is based on the use of both passive and active feedback with current reuse techniques to achieve the required low NF, high BW, and suitable gain. An auxiliary transistor is added to the differential implementation to achieve a high linearity. The circuit is designed in 0.13μm TSMC technology and exhibits a gain of 18.4dB over an entire bandwidth of 6.6GHz. Across the whole band of interest, the NF does not exceed 3dB, while the IIP3 is maintained above 6dBm, and it consumes 13.4mW DC power from a 1.5V supply.
Starting Page	953
Ending Page	956
File Size	480528
Page Count	4
File Format	PDF
ISBN	9781479941346
ISSN	15483746
e-ISBN	9781479941322
DOI	10.1109/MWSCAS.2014.6908574
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-08-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise measurement CMOS integrated circuits Transistors Wideband Low-noise amplifiers Linearity Noise inductorless wideband LNA high linearity
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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