NDLI: CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control

Content Provider	IEEE Xplore Digital Library
Author	Chan-Kyung Kim Bai-Sun Kong Chil-Gee Lee Young-Hyun Jun
Copyright Year	2008
Description	Author affiliation: Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon (Chan-Kyung Kim; Bai-Sun Kong; Chil-Gee Lee)
Abstract	This paper presents novel low-cost CMOS temperature sensor for controlling the self-refresh period of a mobile DRAM. In the proposed temperature sensor, the temperature dependency of poly resistance is used to generate a temperature-dependent bias current, and a ring oscillator driven by this bias current is employed to obtain the digital code pertaining to on-chip temperature. This method is highly area- efficient, simple and easy for IC implementation as compared to traditional temperature sensors based on bandgap reference. The proposed CMOS temperature sensor was fabricated with an 80 nm 3-metal DRAM process, which occupies extremely small silicon area of only about 0.016 m with under 1uW power consumption for providing 0.7degC effective resolution at 1 sample/sec processing rate. This result indicates that as much as 73% area reduction was obtained with improved resolution as compared to the conventional temperature sensor in mobile DRAM.
Starting Page	3094
Ending Page	3097
File Size	161277
Page Count	4
File Format	PDF
ISBN	9781424416837
DOI	10.1109/ISCAS.2008.4542112
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Ring oscillators Random access memory Temperature control Frequency Temperature measurement Temperature dependence Energy consumption Communication system control Signal generators
Content Type	Text
Resource Type	Article

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