NDLI: Analysis of Various Dopants on the <formula formulatype=inline> <tex Notation=TeX>${rm MgB}_{2}$</tex></formula> Superconducting Properties

Content Provider	IEEE Xplore Digital Library
Author	Giunchi, G. Perini, E. Orecchia, C. Ripamonti, G. Bassani, E. Carcano, G. DeMarzi, G. Viola, R. Turtu, S.
Copyright Year	2002
Abstract	The doping of MgB₂ superconductor has been approached with the addition of carbon atoms into the boron sites and metallic elements (i.e. Zn,Cu,Co) into the MgB₂ lattice. Here we use the Mg-Reactive Liquid Infiltration process in an attempt to promote the dopant insertion, either by using Mg based alloys and mixing the dopants (i.e. nano-size SiC in the case of C doping) with the boron powders. The efficiency of the MgB₂ crystal lattice doping via the infiltration process is monitored by measuring the lattice parameters variation by X-ray diffraction and by microanalytical fluorescence scanning spectroscopy. The superconducting properties have been measured magnetically at high fields and at various temperatures, up to about the critical temperature. The magnetization cycles have shown a substantial increase of the irreversibility field, B _irr, with doping. The performances of the MgB₂ with different dopants are compared and discussed.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	2802
Ending Page	2806
Page Count	5
File Size	1262931
File Format	PDF
ISSN	10518223
Volume Number	19
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Image analysis Doping Lattices Boron alloys Magnetic field measurement Temperature Carbon Chemical elements Silicon carbide Powders reactive liquid infiltration Ionic radius irreversibility field pinning
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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