NDLI: Development of Nb/Al-AlN/NbTiN SIS Junctions With ICP Nitridation

Content Provider	IEEE Xplore Digital Library
Author	Cecil, T.W. Cyberey, M.E. Matthews, R.E. Zhang, J.Z. Lichtenberger, A.W.
Copyright Year	2002
Abstract	Increasing the operating frequency of SIS receivers requires a shift from Nb/Al-AlO_X/Nb junctions to new material systems. Two major limiting factors of higher frequency operation are the increase in subgap leakage that occurs in AlO_X barriers as current densities approach and exceed 10 kA/cm² and the increased loss in Nb electrodes above ~ 700 GHz. A promising alternative structure is the hybrid Nb/Al-AlN/NbTiN junction. Realization of these devices has been difficult due to the challenge of fabricating devices with repeatable current densities and electrical characteristics. We present on the fabrication and dc testing of Nb/AIN/NbTiN junctions. The A1N barrier is formed using our inductively coupled plasma (ICP) technique which allows for independent control of both ion energy and current density. This improved control enables the repeatable synthesis of high quality and high Jc barriers. Nb and NbTiN electrodes are deposited by unbalanced dc magnetron. A new fabrication process was developed to enable fabrication of junctions with area as small as 0.28 mum2. The relationship between barrier thickness and plasma conditions is determined by in-situ discrete ellipsometry. Ellipsometry results were verified by comparison with measured current-voltage characteristics. I(V) curves for a range of junction sizes are presented. Plans for in-situ Faraday monitoring of the energy and current density of the ICP nitridation plasma will also be discussed.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	409
Ending Page	412
Page Count	4
File Size	748070
File Format	PDF
ISSN	10518223
Volume Number	19
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Niobium Current density Fabrication Plasma properties Plasma density Plasma measurements Frequency Electrodes Ellipsometry Hybrid junctions SIS Aluminum nitride inductively couple plasma niobium titanium nitride
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Fabrication of Submicrometer High Current Density ${hbox{ Nb/Al-AlN}}_{rm x}/{hbox{ Nb}}$ Junctions

Fabrication of Nb/Al-N/sub x//NbTiN junctions for SIS mixer applications

Analysis of the fabrication process of Nb/Al-AlN/sub x//Nb tunnel junctions with low R/sub n/A values for SIS mixers

Fabrication and mixer performance of Nb/Al double-barrier junctions

Low Noise 1 THz–1.4 THz Mixers Using Nb/Al-AlN/NbTiN SIS Junctions

Subgap Tunneling Current at Low Temperature in Nb/Al-AlN/Nb SIS Junctions

Development of Low Noise THz SIS Mixer Using an Array of Nb/Al-AlN/NbTiN Junctions

Properties of RF-sputtered Nb/Al-AlO/sub x//Nb Josephson SNAP junctions

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Development of Nb/Al-AlN/NbTiN SIS Junctions With ICP Nitridation

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