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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tomaszewski, D. Malesinska, J. Gluszko, G. |
| Copyright Year | 2015 |
| Description | Author affiliation: Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron., Warsaw, Poland (Tomaszewski, D.; Malesinska, J.; Gluszko, G.) |
| Abstract | Two simple non-iterative methods of MOSFET threshold voltage parameter extraction are presented. They are valid for threshold voltage-based and charge-based compact models of MOS transistors. The methods take advantage of the features of the model formulae and their derivatives. The methods have been illustrated using both real measurements and data obtained via simulation of simple circuits used for extraction of the pinch-off voltage of the MOSFET EKV model. The simulations have been done using an open-source program Qucs. |
| Starting Page | 222 |
| Ending Page | 226 |
| File Size | 309252 |
| Page Count | 5 |
| File Format | |
| e-ISBN | 9788363578077 |
| DOI | 10.1109/MIXDES.2015.7208514 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-06-25 |
| Publisher Place | Poland |
| Access Restriction | Subscribed |
| Rights Holder | Department of Microelectronics and Computer Science, Lodz Univeristy of Technology |
| Subject Keyword | MOSFET Voltage measurement pinch-off voltage body factor Fermi level Linear regression threshold voltage Logic gates EKV model Threshold voltage Integrated circuit modeling Standards |
| Content Type | Text |
| Resource Type | Article |
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