NDLI: Development of radiation-hard bandgap reference and temperature sensor in CMOS 130 nm technology

Content Provider	IEEE Xplore Digital Library
Author	Kuczynska, M. Gozdur, S. Bugiel, S. Firlej, M. Fiutowski, T. Idzik, M. Michelis, S. Moron, J. Przyborowski, D. Swientek, K.
Copyright Year	2015
Description	Author affiliation: AGH Univ. of Sci. & Technol., Cracow, Poland (Kuczynska, M.; Gozdur, S.; Bugiel, S.; Firlej, M.; Fiutowski, T.; Idzik, M.; Moron, J.; Przyborowski, D.; Swientek, K.) \|\| CERN, Geneva, Switzerland (Michelis, S.)
Abstract	A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, which show correct operation (<;1mV bandgap stability, linear PTAT) in teperature range -20 to 100 celsius degree.
Starting Page	324
Ending Page	329
File Size	1450453
Page Count	6
File Format	PDF
e-ISBN	9788363578077
DOI	10.1109/MIXDES.2015.7208536
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-25
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	Department of Microelectronics and Computer Science, Lodz Univeristy of Technology
Subject Keyword	Temperature sensors ELTMOS Temperature dependence PTAT Photonic band gap bandgap DTMOS Layout CMOS integrated circuits Transistors Standards
Content Type	Text
Resource Type	Article

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