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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Alarcao, J.P. Oliveira, L.B. Oliveira, J.P. Santos-Tavares, R. |
| Copyright Year | 2015 |
| Description | Author affiliation: Dept. of Electr. Eng. (DEE), Univ. Nova de Lisboa (UNL), Caparica, Portugal (Alarcao, J.P.; Oliveira, L.B.; Oliveira, J.P.; Santos-Tavares, R.) |
| Abstract | Noise canceling techniques have been successfully applied to the design of modern multi-band RF-CMOS inductor-less receivers. However, low voltage supply requirements are imposing new design challenges which are pushing the operation of the MOS transistor into moderate or weak inversion, making the setup of closed sizing expressions a difficult task. This paper presents a Si2 OpenAccess based circuit analysis tool that can combines a symbolic equation extractor with the transistor parameters obtained from precise models, reinforcing the performance estimation while reducing the design time. The tool is applied for a wide-band Low Noise Amplifier (LNA). The results are validated by comparing them with values obtained from SpectreRF eletrical simulations using a 130 nm CMOS technology. |
| Starting Page | 464 |
| Ending Page | 469 |
| File Size | 519323 |
| Page Count | 6 |
| File Format | |
| e-ISBN | 9788363578077 |
| DOI | 10.1109/MIXDES.2015.7208564 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-06-25 |
| Publisher Place | Poland |
| Access Restriction | Subscribed |
| Rights Holder | Department of Microelectronics and Computer Science, Lodz Univeristy of Technology |
| Subject Keyword | Solid modeling Noise CAD Si2 OpenAccess Noise measurement RF-CMOS Semiconductor device modeling Weak Inversion Modified Nodal Analysis EDA Tool Mathematical model Transistors Integrated circuit modeling |
| Content Type | Text |
| Resource Type | Article |
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