NDLI: Global extraction of MOSFET parameters using the EKV model: Some properties of the underlying optimization task

Content Provider	IEEE Xplore Digital Library
Author	Arabas, J. Bartnik, L. Szostak, S. Tomaszewski, D.
Copyright Year	2009
Description	Author affiliation: Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Poland (Szostak, S.) \|\| Institute of Electronic Systems, Warsaw University of Technology, Poland (Arabas, J.; Bartnik, L.) \|\| Institute of Electron Technology, Warsaw, Poland (Tomaszewski, D.)
Abstract	We consider global extraction of parameters of the MOSFET structure with the use of the EKV model. The extraction is defined as a task of minimizing the approximation error which is the discrepancy between the measured and model-generated I–V curves. As a result of the minimization, a set of parameter values is obtained where the minimum is observed. These values are treated as the extraction results. In this study we assume certain values of MOSFET parameters, we generate I–V curves, then we treat them as is they were measurements and try to perform extraction. Thus we are able to judge about the quality of results. We study the structure of local minima of the approximation error. We show that the error function has many local minima, and the global minimum appears for true parameter values. We investigate the relation between the approximation error and the error of extracted parameter values. We also show how measurement errors introduce ambiguities in the extraction results.
Starting Page	67
Ending Page	72
File Size	464473
Page Count	6
File Format	PDF
ISBN	9781424447985
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-25
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	Tech Univ of Lodz
Subject Keyword	Integrated circuit technology Measurement errors MOSFET Optimization methods EKV model Microelectronics global optimization Parameter extraction Design optimization evolutionary methods MOSFET circuits Approximation error Integrated circuit modeling Electrons
Content Type	Text
Resource Type	Article

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