NDLI: Heterogenous integration technology using wafer-to-wafer transfer

Content Provider	IEEE Xplore Digital Library
Author	Tanaka, S.
Copyright Year	2015
Description	Author affiliation: Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan (Tanaka, S.)
Abstract	The integration of heterogeneous components and materials is a powerful method to create more functional, higher performance and/or smaller devices. A typical example is the integration of a frequency control device with a CMOS (complementary metal oxide semiconductor) integrated circuit (IC). This paper introduces three kinds of integration methods based on wafer-to-wafer transfer technology and their applications. 1) A functional film such as ferroelectric films was transferred from a Si wafer to a CMOS wafer by adhesive wafer bonding. PZT (lead zirconate titanate), B-doped diamond and BST (barium strontium titanate) were once deposited on Si wafers at high temperature, and then transferred to CMOS wafers to fabricate a piezoelectric microswitch, an electrochemical biosensor array and a tunable power amplifier, respectively. 2) A one-chip bandwidth-tunable filter for TV white space cognitive wireless LAN was made by the monolithic integration of SAW (surface acoustic wave) resonators and BST varactors. The BST film was transferred from a sapphire wafer to a $LiTaO_{3}$ wafer by laser-assisted peeling and Au-Au bonding. 3) Laser-assisted selective die transfer technology for the wafer-level integration and packaging of different sizes of dies has been developed. It was applied to a 2 GHz one-chip film bulk acoustic wave oscillator for timing applications.
Starting Page	1
Ending Page	5
File Size	2699221
Page Count	5
File Format	PDF
e-ISBN	9781479981823
DOI	10.1109/ULTSYM.2015.0136
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-21
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films CMOS integrated circuits Varactors Bonding Gold Surface acoustic waves FBAR (fim bulk acoustic resonator) MEMS (micro electro mechanical systems) Wafer bonding PZT (lead zirconate titanate) BST (barium strontium titanate) B-doped diamond SAW (surface acoustic wave)
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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