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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Caliendo, C. |
| Copyright Year | 2009 |
| Description | Author affiliation: Istituto dei Sistemi Complessi, CNR, Via del Fosso del Cavaliere 100, 00133 Rome, Italy (Caliendo, C.) |
| Abstract | Highly c-axis oriented piezoelectric AlN films were grown at 80°C by RF reactive magnetron sputtering technique on the metallized surface of Si, Si and Al substrates. The films were smooth and extremely adhesive to all the bare and Pt- or Al-coated substrates. The frequency response of AlN-based bulk acoustic wave (BAW) transducers implemented on semi-infinite (hundreds of μms) substrates was tested for different piezoelectric film thicknesses. The BAW transducers operating frequencies, in the range 1 to 2.4 GHz, were found in good accordance with those theoretically calculated by using the one-dimensional physical model in the lossless materials approximation. The theoretical frequency response of the BAW transducers was also studied for different inner electrode/piezoelectric film thickness ratio values, in order to go insight the BAW device design tradeoffs performances. Thin film bulk acoustic resonators (TFBAR), consisting of an AlN film sandwiched between two metal electrodes, was implemented on a thin Si membrane and designed to operate in the fundamental thickness-extensional mode. The electrical performance of the TFBARs, showing different AlN film thicknesses, have been evaluated in the resonance frequency range from 1.16 to 2.7 GHz. The Butterworth-Van Dyke model was derived to simulate the electrical behavior of the TFBAR in the vicinity of the film resonance. Effective coupling coefficient and unloaded quality factor Q of about 3.9 % and 150 were achieved. The obtained experimental results confirm that AlN films are suitable for high frequency application even in the region of low temperature deposition values. |
| Starting Page | 2012 |
| Ending Page | 2015 |
| File Size | 1607283 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424443895 |
| ISSN | 19485727 |
| DOI | 10.1109/ULTSYM.2009.5441496 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-09-20 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Acoustic waves Acoustic transducers Transistors Film bulk acoustic resonators Piezoelectric films Piezoelectric transducers Substrates Sputtering Semiconductor films Frequency response |
| Content Type | Text |
| Resource Type | Article |
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