NDLI: Electrostatic discharge sensitivity investigation on organic field-effect thin film transistors

Content Provider	IEEE Xplore Digital Library
Author	Lim, T. Gieser, H. Santarelli, L. Cacialli, F.
Copyright Year	2015
Description	Author affiliation: London Centre for Nanotechnol., Univ. Coll. London (UCL), London, UK (Santarelli, L.; Cacialli, F.) \|\| Anal. & Test of Integrated Syst. ATIS, Fraunhofer Res. Instn. for Modular Solid State, Munich, Germany (Lim, T.; Gieser, H.)
Abstract	Conventional CMOS technologies require high production costs, which are largely due to masks production and high specification equipment. Interestingly, conjugated polymers and plastic semiconductors offer potential substitutes to lower the production expenses. Such materials can be used in applications such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), and organic photovoltaics (OPVs). However, electrical reliability, and especially potential damage by electrostatic discharge (ESD), is a major issue in the production cycle and cost, and also during operation. Here we present investigation of the ESD sensitivity of OFETs based on poly (3-hexylthiophene-2,5-diyl) (P3HT), which has so far received little or no attention in the literature.
Starting Page	1
Ending Page	4
File Size	224673
Page Count	4
File Format	PDF
ISBN	9781479988938
DOI	10.1109/NEWCAS.2015.7182117
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-07
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrostatic discharges OFETs Current measurement Logic gates Plastics Leakage currents electrostatic discharge (ESD) Organic field-effect transistor (OFET) Regioregular poly(3-hexylthiophene-2, 5-diyl) (P3HT)
Content Type	Text
Resource Type	Article

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