NDLI: Towards a gm/ID design methodology for polymer-based organic thin film transistors

Content Provider	IEEE Xplore Digital Library
Author	Zanella, F. von Muhlenen, A. Szamel, Z. Nisato, G. Enz, C. Sallese, J.
Copyright Year	2011
Description	Author affiliation: Centre Suisse d'Electronique et de Microtechnique, CSEM SA, Mattenstrasse 22, 4016 Basel, Switzerland (Zanella, F.; von Muhlenen, A.; Szamel, Z.; Nisato, G.; Enz, C.) \|\| School of Electrical Engineering, Swiss Federal Institute of Technology, EPFL, Station 11, 1015 Lausanne, Switzerland (Sallese, J.)
Abstract	In this paper we show based on experiments that an invariant representation exists for various polymer-based solution processable organic thin film transistors (OTFTs). Despite the fact that this technology suffers from a non-negligible spread of parameters, all experimental data exhibit low dispersion when represented in a gm/ID versus ID diagram. This result is important for circuit design strategy based on the gm/ID representation, giving more insight into analogue design methodology. In addition, the gm/ID invariant can also be used to extract the gate voltage mobility dependence that is inherent to organic field effect transistor.
Starting Page	379
Ending Page	383
File Size	185023
Page Count	5
File Format	PDF
ISBN	9781457703041
e-ISBN	9788393207527
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-16
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	Tech Univ of Lodz
Subject Keyword	PTAA OFET OTFT OFETs Logic gates gm/ID Organic thin film transistors P3HT Polymers
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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