NDLI: Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

Content Provider	IEEE Xplore Digital Library
Author	Min-Cheng Chen Hsiao-Chien Chen Ta-Hsien Lee Yu-Hsien Lin Jyun-Hung Shih Bo-Wei Wang Yun-Fang Hou Yi-Ju Chen Chia-Yi Lin Chang-Hsien Lin Yi-Ping Hsieh ChiaHua Ho Mu-Yi Hua Jian-Tai Qiu Tahui Wang Fu-Liang Yang
Copyright Year	2013
Description	Author affiliation: Nat. Nano Device Labs., Hsinchu, Taiwan (Min-Cheng Chen; Yun-Fang Hou; Yi-Ju Chen; Chia-Yi Lin; Chang-Hsien Lin; ChiaHua Ho; Fu-Liang Yang) \|\| Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan (Bo-Wei Wang; Tahui Wang) \|\| Center of Teacher Educ., Nat. Cheng Kung Univ., Tainan, Taiwan (Yi-Ping Hsieh) \|\| Grad. Inst. of Biomed. Sci., Chang Gung Univ., Taoyuan, Taiwan (Hsiao-Chien Chen; Mu-Yi Hua; Jian-Tai Qiu) \|\| Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan (Ta-Hsien Lee; Yu-Hsien Lin; Jyun-Hung Shih)
Abstract	This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope $(V_{th}$ shift > 60 $mV/10^{-16}C)$ with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.
Sponsorship	IEEE Electron Devices Soc.
File Size	1918437
File Format	PDF
ISBN	9781479901128
ISSN	19381891
e-ISBN	9781479901135
e-ISBN	9781479901111
DOI	10.1109/IRPS.2013.6532089
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Silicon Nanoscale devices Nanobioscience Electrodes Sensors Surface treatment semiconductive sensors Charge coupling effect dection stability nanosensor fabrication nanowire FET
Content Type	Text
Resource Type	Article

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