NDLI: Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Hanawa, H. Onodera, H. Nakajima, A. Horio, K.
Copyright Year	2013
Description	Author affiliation: Fac. of Syst. Eng., Shibaura Inst. of Technol., Saitama, Japan (Hanawa, H.; Onodera, H.; Nakajima, A.; Horio, K.)
Abstract	Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those for the case of gate-field-plate structure. It is shown that the reduction rate of drain-lag is similar between the two structures, but the reduction rates of gate lag and current collapse are smaller for the source-field-plate structure. This is because the electric field at the drain edge of the gate becomes higher in the off state and the trapping effects become more significant. For this reason, an off-state breakdown voltage is a little lower in the source-field-plate structure. It is suggested that there is an optimum thickness of SiN passivation layer to minimize the buffer-related current collapse in both structures.
Sponsorship	IEEE Electron Devices Soc.
File Size	519932
File Format	PDF
ISBN	9781479901128
ISSN	19381891
e-ISBN	9781479901135
e-ISBN	9781479901111
DOI	10.1109/IRPS.2013.6532058
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Gallium nitride Aluminum gallium nitride HEMTs MODFETs Buffer layers Transient analysis two-dimensional analysis GaN HEMT field plate lag phenomena current collapse breakdown voltage
Content Type	Text
Resource Type	Article

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