NDLI: Key improvements of the MEMS switch lifetime thanks to a dielectric-free design and contact reliability investigations in hot/cold switching operations

Content Provider	IEEE Xplore Digital Library
Author	Souchon, F. Reig, B. Dieppedale, C. Thouy, L. Koszewski, A. Sibuet, H. Papaioannou, G.
Copyright Year	2013
Description	Author affiliation: Solid State Phys., Univ. of Athens, Athens, Greece (Papaioannou, G.) \|\| CEA, LETI, Grenoble, France (Souchon, F.; Reig, B.; Dieppedale, C.; Thouy, L.; Koszewski, A.; Sibuet, H.)
Abstract	Dielectric charging and contact degradations are the two major challenges to improve the lifetime of series ohmic electrostatic MEMS switches. This paper details our approach and our main results to overcome the failures due to dielectric charging. We introduce a time predictive model for charge accumulation that we use as a design tool for reliability. The key parameters are listed and a new switch design is proposed to reduce the charging: the dielectric materials between the actuation electrodes are removed as much as possible. This dielectric-free design gives remarkable results in terms of dielectric charging sensitivity: the pull-in voltage decreases a little bit at initial times, and remains steady for longer time. The second major challenge, that remains to be considered, deals with the contact reliability. For that purpose, gold and ruthenium contacts have been investigated under several operating conditions. Gold contacts give good results in cold switching conditions whereas ruthenium suffers from surface contamination which increases quickly the contact resistance. In hot switching conditions, both materials are sensitive to material transfer mechanism, the failure rate being proportional to the open circuit voltage. Nevertheless, ruthenium seems more resistant to a material transfer than gold, and offers performances acceptable for some specific applications. A hermetic packaging at wafer level should allow to improve the contact reliability thanks to an efficient management of the surface contamination issue.
Sponsorship	IEEE Electron Devices Soc.
File Size	2395278
File Format	PDF
ISBN	9781479901128
ISSN	19381891
e-ISBN	9781479901135
e-ISBN	9781479901111
DOI	10.1109/IRPS.2013.6532048
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Contacts Dielectrics Voltage measurement Electrodes Microswitches Reliability hot switching MEMS switch reliability dielectric charging contact material transfer cold switching
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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