NDLI: Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories

Content Provider	IEEE Xplore Digital Library
Author	Amoroso, S.M. Gerrer, L. Adamu-Lema, F. Markov, S. Asenov, A.
Copyright Year	2013
Description	Author affiliation: Gold Stand. Simulations Ltd., Glasgow, UK (Asenov, A.) \|\| Device Modelling Group, Univ. of Glasgow, Glasgow, UK (Amoroso, S.M.; Gerrer, L.; Adamu-Lema, F.; Markov, S.)
Abstract	This paper presents a detailed simulation investigation of the impact of statistical variability and 3D electrostatics on SILC distribution in nanoscale Flash memories. Considering a 1-TAT model we study the SILC statistics under stationary and dynamic retention conditions. Our results show that SILC is dispersed over the channel area due to non-uniform electrostatics in nanoscale devices. Further, the floating gate poly-silicon granularity plays a major role in determining the SILC distribution, depending on the gate polarity. Dynamic charge loss simulations highlight that the impact of 3D electrostatics is dominant over the cell-to-cell variability. Finally, we analyze the electron emission statistics on a single cell, showing that this gives rise to a lower SILC dispersion than an analytical Poisson charge loss statistics. Our results are fundamental to determine the degree of accuracy of 1D models for the post-cycling charge loss statistics simulation in nanoscale Flash memories.
Sponsorship	IEEE Electron Devices Soc.
File Size	1171008
File Format	PDF
ISBN	9781479901128
ISSN	19381891
e-ISBN	9781479901135
e-ISBN	9781479901111
DOI	10.1109/IRPS.2013.6531980
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrostatics Solid modeling Three-dimensional displays Flash memories Nanoscale devices Dispersion Logic gates semiconductor device modeling SILC retention variability electron emission statistics (EES)
Content Type	Text
Resource Type	Article

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