NDLI: Electromigration early failure void nucleation and growth phenomena in Cu and Cu(Mn) interconnects

Content Provider	IEEE Xplore Digital Library
Author	Hauschildt, M. Hennesthal, C. Talut, G. Aubel, O. Gall, M. Yeap, K.B. Zschech, E.
Copyright Year	2013
Description	Author affiliation: Fraunhofer Inst. for Nondestructive Testing (IZFP-D), Dresden, Germany (Gall, M.; Yeap, K.B.; Zschech, E.) \|\| GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany (Hauschildt, M.; Hennesthal, C.; Talut, G.; Aubel, O.)
Abstract	Electromigration early failure void nucleation and growth phenomena were studied using large-scale, statistical analysis methods. A total of about 496,000 interconnects were tested over a wide current density and temperature range (j = 3.4 to 41.2 $mA/μm^{2},$ T = 200 to 350°C) to analyze the detailed behavior of the current density exponent n and the activation energy $E_{a}.$ The results for the critical V1M1 downstream interface indicate a reduction from n = 1.55±0.10 to n = 1.15±0.15 when lowering the temperature towards 200°C for Cu-based interconnects. This suggests that the electromigration downstream early failure mechanism is shifting from a mix of nucleation-controlled (n = 2) and growth-controlled (n = 1) to a fully growth-controlled mode, assisted by the increased thermal stress at lower temperatures (especially at use conditions). For Cu(Mn)-based interconnects, a drop from n = 2.00±0.07 to n = 1.64±0.2 was found, indicating additional effects of a superimposed incubation time. Furthermore, at lower current densities, the $E_{a}$ value seems to drop for both Cu and Cu(Mn) interconnects by a slight, but significant amount of 0.1 - 0.2eV. Implications for extrapolations of accelerated test data to use conditions are discussed. Furthermore, the scaling behavior of the early failure population at the NSD=-3 level (F~0.1%) was analyzed, spanning 90, 65, 45, 40 and 28 nm technology nodes.
Sponsorship	IEEE Electron Devices Soc.
File Size	485988
File Format	PDF
ISBN	9781479901128
ISSN	19381891
e-ISBN	9781479901135
e-ISBN	9781479901111
DOI	10.1109/IRPS.2013.6531951
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Current density Stress Temperature distribution Thermal stresses Testing Metals Extrapolation Large-Scale Statistics Electromigration Early Failure Void Nucleation Void Growth Current Density Exponent Activation Energy
Content Type	Text
Resource Type	Article

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