NDLI: Soft errors induced by natural radiation at ground level in floating gate flash memories

Content Provider	IEEE Xplore Digital Library
Author	Just, G. Autran, J.L. Serre, S. Munteanu, D. Sauze, S. Regnier, A. Ogier, J.L. Roche, P. Gasiot, G.
Copyright Year	2013
Description	Author affiliation: Inst. of Mater., Microelectron. & Nanosci. of Provence (IM2NP), Aix-Marseille Univ., Marseille, France (Just, G.; Autran, J.L.; Serre, S.; Munteanu, D.; Sauze, S.) \|\| Reliability & Electr. Characterization Lab., STMicroelectron., Rousset, France (Regnier, A.; Ogier, J.L.) \|\| Rad-hard & Ultra Low Voltage Lab., STMicroelectron., Crolles, France (Roche, P.; Gasiot, G.)
Abstract	This work reports the combined characterization at mountain altitude (on the ASTEP Platform at 2552 m) and at sea-level of more than ~50 Gbit of 90 nm NOR flash memories subjected to natural radiation (atmospheric neutrons). This wafer-level experiment evidences a limited impact of the terrestrial radiation at ground level on the memory SER evaluated without ECC. Experimental values are compared to estimations obtained from Monte Carlo simulation using the TIARA-G4 code combined with a physical model for charge loss in such floating-gate devices.
Sponsorship	IEEE Electron Devices Soc.
File Size	1714966
File Format	PDF
ISBN	9781479901128
ISSN	19381891
e-ISBN	9781479901135
e-ISBN	9781479901111
DOI	10.1109/IRPS.2013.6531992
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nonvolatile memory Flash memories Atmospheric modeling Integrated circuit modeling Neutrons Adaptation models Semiconductor device modeling single-event upset Soft-error rate real-time testing non-volatile memory flash memory atmospheric neutrons
Content Type	Text
Resource Type	Article

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