NDLI: Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories

Content Provider	IEEE Xplore Digital Library
Author	Miccoli, C. Barber, J. Compagnoni, C.M. Paolucci, G.M. Kessenich, J. Lacaita, A.L. Spinelli, A.S. Koval, R.J. Goda, A.
Copyright Year	2013
Description	Author affiliation: Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Vinci, Italy (Miccoli, C.; Compagnoni, C.M.; Paolucci, G.M.; Lacaita, A.L.; Spinelli, A.S.) \|\| Intel Corp., Boise, ID, USA (Koval, R.J.) \|\| Micron Technol. Inc., Boise, ID, USA (Barber, J.; Kessenich, J.; Goda, A.)
Abstract	We report the first experimental evidence of discrete threshold-voltage transients on high-density NAND Flash arrays during post-cycling data retention. Proper choice of experimental conditions eliminates the impact of averaging effects and disturbs on the transients, enabling clear detection of single charge emission events from/to the tunnel oxide of sub-30nm NAND Flash cells. A stochastic model for the discrete emission process was developed from experimental data, demonstrating that number fluctuation of charges trapped in the tunnel oxide and the statistical nature of their emission dynamics strongly affect the post-cycling data retention performance of the arrays. These results pave the way for further analyses of NAND Flash reliability, where the behavior of single electrons and defects can be monitored and facilitate detailed assessments of the fundamental scaling challenges arising from the discrete nature of charge trapping/detrapping.
Sponsorship	IEEE Electron Devices Soc.
File Size	351895
File Format	PDF
ISBN	9781479901128
ISSN	19381891
e-ISBN	9781479901135
e-ISBN	9781479901111
DOI	10.1109/IRPS.2013.6531977
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transient analysis Flash memories Arrays Probability Electron traps Reliability semiconductor device modeling program/erase cycling semiconductor device reliability
Content Type	Text
Resource Type	Article

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