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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Meng-Fan Chang Shin-Jang Shen Chia-Chi Liu Che-Wei Wu Yu-Fan Lin Shang-Chi Wu Chia-En Huang Han-Chao Lai Ya-Chin King Chorng-Jung Lin Hung-Jen Liao Yu-Der Chih Yamauchi, H. |
| Copyright Year | 2011 |
| Description | Author affiliation: TSMC, Hsinchu, Taiwan (Hung-Jen Liao; Yu-Der Chih) || Fukuoka Institute of Technology, Fukuoka, Japan (Yamauchi, H.) || National Tsing Hua University, Hsinchu, Taiwan (Meng-Fan Chang; Shin-Jang Shen; Chia-Chi Liu; Che-Wei Wu; Yu-Fan Lin; Shang-Chi Wu; Chia-En Huang; Han-Chao Lai; Ya-Chin King; Chorng-Jung Lin) |
| Abstract | Decreasing read cell current (I) has become a key trend in nonvolatile memory (NVM). This is not only due to device size and V scaling while keeping the same threshold voltage (V), but also to the growing spread of the following applications: 1) multiple-level-cell (MLC) [1–2] to achieve smaller area-per-bit; 2) lower-V [3] to save power consumption; 3) Logic-process-compatible onetime programming memories (OTP) for embedding into mobile chips. A smaller I leaves the sense amplifiers (SAs) operation vulnerable to 1) bitline (BL) level offset due to noise, bias and load (C) mismatches and 2) V variation. As device size and BL-pitch is continually scaled down, the above factors have become major showstopper for SAs. To tolerate these offsets, small-INVMs suffer from slow read speed or high read fail probability. Thus, a more largely offset tolerant SA is a prerequisite to achieve faster read speeds. In this study, we propose a new offset tolerant current-sampling-based SA (CSB-SA) to achieve 7× faster read speed than previous SAs for sensing small I. A fabricated 90nm 512Kb OTP macro, using the CSB-SA and our CMOS-logic-compatible OTP cell [4], achieves 26ns macro random access time for reading sub-200nA I. Measurements also confirmed that this 90nm CSB-SA could achieve sub-100nA sensing. |
| Starting Page | 206 |
| Ending Page | 208 |
| File Size | 1447134 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781612843032 |
| ISSN | 01936530 |
| e-ISBN | 9781612843025 |
| DOI | 10.1109/ISSCC.2011.5746284 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-02-20 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Sensors Nonvolatile memory Computer architecture Microprocessors Solid state circuits Switches MOS devices |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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