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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shyh-Shyuan Sheu Meng-Fan Chang Ku-Feng Lin Che-Wei Wu Yu-Sheng Chen Pi-Feng Chiu Chia-Chen Kuo Yih-Shan Yang Pei-Chia Chiang Wen-Pin Lin Che-He Lin Heng-Yuan Lee Pei-Yi Gu Sum-Min Wang Chen, F.T. Keng-Li Su Chen-Hsin Lien Kuo-Hsing Cheng Hsin-Tun Wu Tzu-Kun Ku Ming-Jer Kao Ming-Jinn Tsai |
| Copyright Year | 2011 |
| Description | Author affiliation: ITRI, Hsinchu, Taiwan (Shyh-Shyuan Sheu; Yu-Sheng Chen; Pi-Feng Chiu; Pei-Chia Chiang; Wen-Pin Lin; Che-He Lin; Heng-Yuan Lee; Pei-Yi Gu; Sum-Min Wang; Chen, F.T.; Keng-Li Su; Hsin-Tun Wu; Tzu-Kun Ku; Ming-Jer Kao; Ming-Jinn Tsai) || National Tsing Hua University, Hsinchu, Taiwan (Meng-Fan Chang; Ku-Feng Lin; Che-Wei Wu; Chia-Chen Kuo; Yih-Shan Yang; Chen-Hsin Lien) || National Central University, Jhongli, Taiwan (Kuo-Hsing Cheng) |
| Abstract | Several emerging nonvolatile memories (NVMs) including phase-change RAM (PCRAM) [1–3], MRAM [4–5], and resistive RAM (RRAM) [6–8] have achieved faster operating speeds than embedded Flash. Among those emerging NVMs, RRAM has advantages in faster write time, a larger resistance-ratio (R-ratio), and smaller write power consumption. However, RRAM cells have large cross-die and within-die resistance variations (R-variations) and require low read-mode bitline (BL) bias voltage (V) to prevent read disturbance. This work proposes process/resistance variation-insensitive read schemes for embedded RRAM to achieve fast read speeds with high yields. An embedded mega-bit scale (4Mb), single-level-cell (SLC) RRAM macro with sub-8ns read-write random-access time is presented. Multi-level-cell (MLC) operation with 160ns write-ver-ify operation is demonstrated. |
| Starting Page | 200 |
| Ending Page | 202 |
| File Size | 1724238 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781612843032 |
| ISSN | 01936530 |
| e-ISBN | 9781612843025 |
| DOI | 10.1109/ISSCC.2011.5746281 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-02-20 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resistance Nonvolatile memory Sensors Solid state circuits Phase change random access memory Electrical resistance measurement Delay |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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