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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zorman, C.A. Barnes, A.C. Feng, P.X. |
| Copyright Year | 2012 |
| Description | Author affiliation: Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA (Zorman, C.A.; Barnes, A.C.; Feng, P.X.) |
| Abstract | Silicon carbide (SiC) is a leading material for both semiconductor devices and harsh environment micro- and nano-electromechanical systems (MEMS/NEMS) due to a combination of exceptional electrical, mechanical and chemical properties. SiC is also an excellent structural material for micromechanical transducers because of its high Young's modulus and mechanical strength. Suspended thin film diaphragms have been used in a wide range of applications, ranging from fundamental materials characterization to structural elements in high temperature pressure transducers. This paper reviews some of our efforts to develop SiC as a structural material for diaphragm-based MEMS, highlighting recent advances by our group in developing these structures for use in electromechanical microsensors and microactuators. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 983160 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457717666 |
| ISSN | 19300395 |
| e-ISBN | 9781457717673 |
| e-ISBN | 9781457717659 |
| DOI | 10.1109/ICSENS.2012.6411566 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-28 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon carbide Films Silicon Sensors Micromechanical devices Residual stresses Actuators Diaphragm Silicon Carbide (SiC) Thin Film MEMS NEMS Resonators |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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