NDLI: CMOS-integrated four-contact sensors for magnetic and mechanical signals: Novel devices, systems, and applications

Content Provider	IEEE Xplore Digital Library
Author	Paul, O.
Copyright Year	2012
Description	Author affiliation: Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany (Paul, O.)
Abstract	Semiconductor devices equipped with four contacts for measuring magnetic and mechanical signals, e.g. Hall sensors and piezoresistive stress sensing elements, have traditionally exploited the action of the external signal on currents flowing in the plane of the semiconductor chips. When operated as temperature-compensated microsensors, they are sensitive to only a small fraction of the externally applied magnetic or mechanical signal components: these are essentially the out-of-plane component of the 3D magnetic field and two in-plane stress components of the 6D stress tensor. A logical way to expand the reach of microsensors based on charge charrier transport to the entirety of applicable magneto-mechanical signals is to engineer them to include vertical current components. In addition to vertical Hall sensors for in-plane magnetic field components, stress sensors are now available for the measurement of out-of-plane normal and shear stress components. Appropriately designed, these devices can be implemented in commercial CMOS technology and thus combined with analog and digital integrated circuitry into multisensor microsystems. The art of engineering them consists of maximizing their sensitivities, while minimizing undesired effects such as offsets and cross-sensitivities, and staying within the technological constraints imposed by the CMOS technology. Applications of these novel devices range from consumer electronics and orthodontics via the automotive sector and automation to the monitoring of advanced microelectronic packaging technologies.
Starting Page	1
Ending Page	6
File Size	1765565
Page Count	6
File Format	PDF
ISBN	9781457717666
ISSN	19300395
e-ISBN	9781457717673
e-ISBN	9781457717659
DOI	10.1109/ICSENS.2012.6411563
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-28
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Geometry Current measurement Stress measurement Magnetic sensors Magnetomechanical effects
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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