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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Barnes, A.C. Jaesung Lee Rawlinson, P.T. Feng, P.X.-L. Zorman, C.A. |
| Copyright Year | 2012 |
| Description | Author affiliation: Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA (Barnes, A.C.; Jaesung Lee; Rawlinson, P.T.; Feng, P.X.-L.; Zorman, C.A.) |
| Abstract | Square poly cry stalline 3C silicon carbide (poly-SiC) thin diaphragms with large aspect ratios (i.e., side length to thickness: L/t ∼ 600) are explored as a structural material for micromechanical resonators. The effects of varying pressure on the characteristics of multiple resonant modes are studied. Load-deflection tests reveal a Young's modulus of E = 344 ± 13 GPa and a residual (built-in) stress of σ = 113 ± 10 MPa. Cyclic loading tests of the diaphragms show no changes in E and σ values after over 30,000 cycles. Resonance measurements of the diaphragms at approximately 5mTorr show peaks with quality (Q) factors of Q's « 14,000 and 45,000 for the first two flexural resonance modes at 85.5kHz and 137.6kHz. With increasing pressure, the measured resonance frequencies shift higher (i.e., stiffening), by approximately 1.7kHz or 1.9% for the 85.5kHz peak, and 1.8kHz or 1.3% for the 137.6kHz peak. Meanwhile, Q's are observed to decrease to ∼400 at 20Torr for the 85.5kHz resonance and to ∼3600 at 2Torr for the 137.6kHz resonance. Simultaneously as the pressure increases, the peak amplitude of the resonance reduces by 97% for the mode at 85.5kHz, and by 93% for the 137.6kHz resonance. These characteristics may be exploited for resonant pressure sensing using poly-SiC. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 4724319 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457717666 |
| ISSN | 19300395 |
| e-ISBN | 9781457717673 |
| e-ISBN | 9781457717659 |
| DOI | 10.1109/ICSENS.2012.6411366 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-28 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Frequency measurement Resonant frequency Pressure measurement Silicon carbide Q measurement Temperature measurement Silicon Pressure Sensor Silicon Carbide (SiC) Poly-SiC MEMS NEMS Diaphragm Resonator Quality (Q) Factor |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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