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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hiwada, K. Tamura, T. |
| Copyright Year | 1994 |
| Description | Author affiliation: Yokogawa Hewlett Packard, Ltd., Japan (Hiwada, K.) |
| Abstract | We propose the newly developed contact scheme for high performance DUT (Device Under Test) interface, so called, HiPEC (High Performance Elastic Connection). The HiPEC consists of Ni based micro- bumps with Cu line-pattern on P-PTFE (Porous Poly Tetra Fluoro Ethylene) membrane, supported by silicon rubber elastoma. The metal contact via micro-bump makes a reliable contact by scratching action, generated by shape transformation of elastoma under small force. The P-PTFE membrane is usable beyond 10 GHz high frequency signal transmission, and has excellent high isolation characteristics with less than sub-pA leakage current. The HiPEC technology is useful for high pin count DUT interface with high performance, replacing contact-pin, and also for die chip contact to enable KGD (Known- Good Die) test of mixed signals MCM (Multi Chip Module). |
| Starting Page | 242 |
| Ending Page | 247 |
| File Size | 458139 |
| Page Count | 6 |
| File Format | |
| ISBN | 0930815394 |
| DOI | 10.1109/ICMCM.1994.753557 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-04-13 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Contacts Biomembranes Circuit testing Packaging Rubber Frequency High speed integrated circuits Silicon Shape Isolation technology |
| Content Type | Text |
| Resource Type | Article |
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