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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tuckerman, D.B. Jarvis, B. Chang-Ming Lin Patel, P. Hunt, M. |
| Copyright Year | 1994 |
| Description | Author affiliation: nCHIP, Inc., CA (Tuckerman, D.B.) |
| Abstract | A new wafer-level bum-in method is presented. The method incorporates a silicon "bum-in substrate" fabricated using MCM-D substrate technology, and includes integral isolation resistors. The novel, Si wafer-to Si wafer pressure contact technology is based on deformable solder bumps and is functional in a high temperature burn-in environment, immune to thermal expansion mismatch problems, reusable, and does not damage or contaminate bond pads. The method is suitable for high-volume production and can reduce bum-in costs, even for chips that are ultimately destined for single-chip packages. |
| Starting Page | 34 |
| Ending Page | 40 |
| File Size | 702053 |
| Page Count | 7 |
| File Format | |
| ISBN | 0930815394 |
| DOI | 10.1109/ICMCM.1994.753526 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-04-13 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Temperature Costs Isolation technology Thermal expansion Resistors Wafer bonding Probes Manufacturing Fixtures |
| Content Type | Text |
| Resource Type | Article |
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