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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sekhar, V.N. Neo, S. Li Hong Yu Trigg, A.D. Cheng Cheng Kuo |
| Copyright Year | 2010 |
| Description | Author affiliation: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685 (Sekhar, V.N.; Li Hong Yu; Trigg, A.D.; Cheng Cheng Kuo) || Alex Corporation(S) PTE LTD, 42, Suntec Tower Three, 8, Temasek Boulevard, Singapore 038988 (Neo, S.) |
| Abstract | In the present study, high density TSV structures have been designed and fabricated with different diameter and depths, ranging from 2 to 60 µm and 50 to 100 µm respectively. The ratios of TSV diameter to space between TSVs are 1∶2, 1∶3 and 1∶4. Inspection of TSV structures at each processing step is very crucial to proceed to next step. 3D X-ray CT scan analysis has been employed to inspect TSV wafers at different processing steps. Detailed 3D X-ray CT scan analysis has been carried out on 20, 50 and 60 um TSV array structures. Using this method, it is possible to observe defect shape, size and distribution by conducting the virtual cross-section at desired location. Based on the detailed online failure analysis, TSV process development parameter are being fine-tuned and optimized. |
| Starting Page | 462 |
| Ending Page | 466 |
| File Size | 1830306 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424485604 |
| e-ISBN | 9781424485628 |
| e-ISBN | 9781424485611 |
| DOI | 10.1109/EPTC.2010.5702683 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-12-08 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Through-silicon vias Three dimensional displays X-ray imaging Computed tomography Copper Failure analysis Milling |
| Content Type | Text |
| Resource Type | Article |
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