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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jae-Hyouk Yoo In-Soo Kang Gi-Jo Jung Sungdong Kim Hyo-Sok Ahn Won-Ho Choi Ki-Sung Jun Doo-Wool Jang In-Hong Baek Joo-Nam Yu |
| Copyright Year | 2010 |
| Description | Author affiliation: Seoul National University of Science and Technology, 138 Gongneung gil, Nowon-gu, 139-743 Korea (Sungdong Kim; Hyo-Sok Ahn; Won-Ho Choi; Ki-Sung Jun; Doo-Wool Jang; In-Hong Baek; Joo-Nam Yu) || Nepes Corporation, 654-2, Gak-Ri, Ochang-Myun, Cheongwon-Gun, Chungbuk, 363-883 Korea (Jae-Hyouk Yoo; In-Soo Kang; Gi-Jo Jung) |
| Abstract | A demand for small form factor in IC packaging has lead to a reduced bump size and an increased current density. The high current density accompanying with Joule heat induces an electromigration failure. In this study, we investigated the effects of under bump metallization (UBM) on the electromigration failure. Three types of UBM such as Cu 5µm, Cu 10µm and Cu 5µm/Ni 2µm were compared with 60µm high Cu pillar bump(CPB). The current density was fixed at $5.09·10^{4}A/cm^{2}$ and the temperature ranged from 130°C to 170°C. Mean time to failure data (MTTF) were obtained from Weibull distribution analysis. MTTF of CPB was longer than the others and the MTTF order was as follows; CPB > Cu/Ni > Cu 10µm > Cu 5µm. As the temperature increased, MTTF decreased regardless of bump structures. This result implied that electromigration reliability of CPB was far better than other solder bumps and Cu/Ni UBM structure was more resistant to electromigration than single Cu UBM. |
| Starting Page | 129 |
| Ending Page | 133 |
| File Size | 1450060 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424485604 |
| e-ISBN | 9781424485628 |
| e-ISBN | 9781424485611 |
| DOI | 10.1109/EPTC.2010.5702620 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-12-08 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Copper Electromigration Nickel Resistance Current density Tin Materials |
| Content Type | Text |
| Resource Type | Article |
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