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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xiaoxin Zhu Kotadia, H. Sha Xu Hua Lu Mannan, S.H. Chan, Y.C. Bailey, C. |
| Copyright Year | 2011 |
| Description | Author affiliation: Department of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong, Hong Kong, China (Sha Xu; Chan, Y.C.) || School of Computing and Mathematical Sciences, University of Greenwich, 30 Park Row, London SE10 9LS, UK (Xiaoxin Zhu; Hua Lu; Bailey, C.) || Physics Department, School of Natural & Mathematical Sciences, King's College London, Strand, London WC2R 2LS, UK (Kotadia, H.; Mannan, S.H.) |
| Abstract | Previous works on electromigration in microelectronics devices have been reviewed, and a multi-physics EM simulation method that combines electric, thermal, atomic diffusion, and stress analysis has been described. The proposed method can be used to predict the atomic vacancy concentration distribution and void formation in metals or alloys that are subject to current loading. |
| Starting Page | 1 |
| Ending Page | 5 |
| File Size | 1651231 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781457717703 |
| e-ISBN | 9781457717697 |
| e-ISBN | 9781457717680 |
| DOI | 10.1109/ICEPT.2011.6066874 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-08-08 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Mathematical model Electromigration Stress Computational modeling Reliability Equations Thermal stresses |
| Content Type | Text |
| Resource Type | Article |
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