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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Remili, Z. Ousten, Y. Levrier, B. Suhir, E. Bechou, L. |
| Copyright Year | 2015 |
| Description | Author affiliation: IMS Lab., Univ. of Bordeaux, Talence, France (Remili, Z.; Ousten, Y.; Levrier, B.; Bechou, L.) || Basic Res., Bell Labs., Murray Hill, NJ, USA (Suhir, E.) |
| Abstract | This paper reports results on application of scanning acoustic microscopy (SAM) for analysis of high-density microassembling technologies such as BGA and TSV. We have demonstrated the interest of an original and dedicated model based on the calculations of the in-depth Point-Spread Function (namely PSF) corresponding to an extension of that of proposed in literature but restricted to the surface of an object. Our model includes the well-known decomposition of an acoustic wave into a solid specimen but also diffraction, calculations of geometrical aberrations and can predict the focal plane distribution (lateral resolution) at a specific focus depth according the Rayleigh diffraction theory. Specific test patterns have been used for metrology evaluation into different materials especially at high acoustic velocities. A specific attention is paid to the application of shear wave imaging capabilities in comparison of longitudinal wave imaging mode for the analysis of stress distribution along an interface from a qualitative point of view believing that one can provide complementary information on stress analysis in contrast of classical B or C-SCAN longitudinal imaging mode. Finally, some applications are given on the well-established Ball-Grid-Array (SBC-BGA) technology still remaining an interest in today's electronic packaging technology and then on a specific TSV design that is currently studied in the framework of the European “MASTER_3D” project. FEM modeling and analytical predictive stress model, implemented and reported in recent published papers, have been compared with SAM imaging results. Non-destructive micro-Raman spectroscopy is also considered to estimate the stress profile into the silicon wafer around circular TSVs by monitoring the wavelength shift of the Raman peak along the radial distance. |
| Starting Page | 2090 |
| Ending Page | 2101 |
| File Size | 1387115 |
| Page Count | 12 |
| File Format | |
| ISBN | 9781479986095 |
| DOI | 10.1109/ECTC.2015.7159891 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-05-26 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Acoustics Imaging Image resolution Attenuation Mathematical model Probes Stress |
| Content Type | Text |
| Resource Type | Article |
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