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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Henry, M.D. Young, T. Hollowell, A.E. Eichenfield, M. Olsson, R.H. |
| Copyright Year | 2015 |
| Description | Author affiliation: Sandia Nat. Lab., Albuquerque, NM, USA (Henry, M.D.; Young, T.; Hollowell, A.E.; Eichenfield, M.; Olsson, R.H.) |
| Abstract | Aluminum nitride (AlN) radio frequency (RF) MEMS filters utilize piezoelectric coupling for high-performance electrical filters with frequency diversity in a small form factor. Furthermore, the compatibility of AlN with CMOS fabrication makes AlN extremely attractive from a commercial standpoint. A technological hurdle has been the ability to package these suspended resonator devices at a wafer level with high yield. In this work, we describe wafer-level packaging (WLP) of AlN MEMS RF filters in an all silicon package with solder balls on nickel vanadium / gold (NiV/Au) bond pads that are subsequently ready for flip chip bonding. For this integration scheme, we utilize a 150 mm device wafer, fabricated in a CMOS foundry, and bond at the wafer level to a cavity silicon wafer, which hermetically encapsulates each device. The cavity wafer is then uniformly plasma etched back using a deep reactive ion etcher resulting in a 100 μm thick hermetic silicon lid encapsulating each die, balled with 250 μm 90/10 Pb/Sn solder balls and finally diced into individually packaged dies. Each die can be frequency-trimmed to an exact frequency by rapid temperature annealing the stress of the metallization layers of each resonator. The resulting technology yields a completely packaged wafer of 900 encapsulated die (14 $mm^{2}$ by 800 μm thick) with multiple resonators and filters at various frequencies in each package. |
| Starting Page | 1331 |
| Ending Page | 1337 |
| File Size | 16718711 |
| Page Count | 7 |
| File Format | |
| ISBN | 9781479986095 |
| DOI | 10.1109/ECTC.2015.7159770 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-05-26 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resonant frequency Silicon Aluminum nitride III-V semiconductor materials Resonator filters Fabrication |
| Content Type | Text |
| Resource Type | Article |
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