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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hashiguchi, H. Yonekura, H. Fukushima, T. Murugesan, M. Kino, H. Lee, K.-W. Tanaka, T. Koyanagi, M. |
| Copyright Year | 2015 |
| Description | Author affiliation: Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan (Hashiguchi, H.; Tanaka, T.) || New Ind. Creation Hatchery Center (NICHe), Tohoku Univ., Sendai, Japan (Fukushima, T.; Murugesan, M.; Lee, K.-W.; Koyanagi, M.) || Dept. of Biomed. Eng., Tohoku Univ., Sendai, Japan (Kino, H.) || Tohoku-MicroTec Co., Ltd., Sendai, Japan (Yonekura, H.) |
| Abstract | We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, $N_{2}$ or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer. |
| Starting Page | 1458 |
| Ending Page | 1463 |
| File Size | 1306143 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781479986095 |
| DOI | 10.1109/ECTC.2015.7159789 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-05-26 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bonding Plasmas Three-dimensional displays Self-assembly Surface treatment Stacking Large scale integration |
| Content Type | Text |
| Resource Type | Article |
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