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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pei-Haw Tsao Hung-Yu Chiu Liao, H.C. Chen, K.C. Sung, M.C. Chen, W. Antai Xu |
| Copyright Year | 2013 |
| Description | Author affiliation: Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan (Pei-Haw Tsao; Hung-Yu Chiu; Liao, H.C.; Chen, K.C.; Sung, M.C.; Chen, W.; Antai Xu) |
| Abstract | Several post wafer saw Al bond pad corrosion events were found with the defect size much larger than that of the conventional Al pad $Al_{2}Cu$ theta-phase galvanic corrosion. The large corrosion defect size has great of concern on degrading the wirebond interconnect reliability. To understand the cause of large size corrosion defect and find the possible solution, the evaluation including splits from both wafer process, such as Al deposition temperature and thickness, and assembly process, such as saw DI water resistance/flow rate/pressure, with/without surfactant, de-taping process ESD control and post-saw wafer clean, were performed using simulated as well as real wafer saw process. The results showed, with 40 minute long wafer saw time, all other splits found pad corrosion defects. Only the split of the worse de-taping ESD control was found with large corrosion defect size by real wafer saw process. The corrosion was found strongly static charge dependent. With proper ESD control during wafer de-taping process or implementing surfactant during wafer saw process, the charge induced pad corrosion can be resolved. |
| Sponsorship | IEEE Components, Packaging Manuf. Technol. Soc. |
| Starting Page | 1545 |
| Ending Page | 1548 |
| File Size | 496785 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479902330 |
| ISSN | 05695503 |
| e-ISBN | 9781479902323 |
| DOI | 10.1109/ECTC.2013.6575777 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-05-28 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Corrosion Process control Electrostatic discharges Assembly Semiconductor device modeling Metals Fabrication |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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