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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jue Wang Xiangyu Dong Yuan Xie |
| Copyright Year | 2012 |
| Description | Author affiliation: Department of Computer Science and Engineering, Pennsylvania State University (Jue Wang; Xiangyu Dong; Yuan Xie) |
| Abstract | Technology scaling of SRAM and embedded DRAM is increasingly constrained by limitations such as leakage power and silicon area. Emerging non-volatile memory technologies are considered as the potential SRAM/eDRAM alternatives for last-level caches in terms of energy and area savings. Unfortunately, these non-volatile memory technologies usually have limited write endurance. Even worse, process variation causes some cells to wear out much earlier than others. While state-of-the-art error-tolerant techniques such as ECC can handle transient soft errors, we need a new architecture for non-volatile last-level caches whose reliability is mainly challenged by hard errors. This paper presents Point-and-Discard (PAD), a hard-failure-tolerant architecture for non-volatile caches. PAD has no initial performance penalty and ensures gradual performance overhead with small storage overhead. By adopting PAD, the lifetime of non-volatile caches can be improved by 4.6X over the conventional architecture under a typical process variation $condition.^{1}$ |
| Starting Page | 253 |
| Ending Page | 258 |
| File Size | 368998 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781450311991 |
| ISSN | 0738100X |
| e-ISBN | 9781450311991 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-06-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Association for Computing Machinery, Inc. (ACM) |
| Subject Keyword | Nonvolatile memory Error correction codes Multiplexing Arrays Phase change random access memory error tolerance Cache non-volatile memories |
| Content Type | Text |
| Resource Type | Article |
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