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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lele Jiang Xiaojing Qin Lifu Chang Yuhua Cheng |
| Copyright Year | 2011 |
| Description | Author affiliation: Semiconductor Manufactuing International Corporation (SMIC), Shanghai 200240, China (Lifu Chang) || Shanghai Research Institute of Microelectronics, Peking University, 201203, China (Lele Jiang; Xiaojing Qin; Yuhua Cheng) |
| Abstract | Pattern dependent interconnect physical parameter variations are studied based on a test chip in 65 nm manufacturing process. The line width bias caused by etch process and the line thickness dishing and erosion caused by CMP process are modeled using electrical and physical measurements. New closed form models for R and C thus are derived. Simulation results show excellent agreement between measurements and new models. The variation impacts on R/C and thus Elmore delay and bandwidth also are investigated qualitatively and quantitatively using the analytical models. |
| Starting Page | 854 |
| Ending Page | 857 |
| File Size | 985461 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781612841922 |
| ISSN | 2162755X |
| e-ISBN | 9781612841939 |
| e-ISBN | 9781612841915 |
| DOI | 10.1109/ASICON.2011.6157339 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-10-25 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Reactive power |
| Content Type | Text |
| Resource Type | Article |
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