NDLI: A Highly Reliable 2-Bits/Cell Split-Gate Flash Memory Cell With a New Program-Disturbs Immune Array Configuration

Content Provider	IEEE Xplore Digital Library
Author	Liang Fang Jing Gu Bo Zhang Wei-Ran Kong Shi-Chang Zou
Copyright Year	1963
Abstract	A highly reliable 2-bits/cell split-gate flash memory cell in a novel program-disturbs immune array architecture is fabricated and demonstrated. Using a novel metal interconnect technique, a new virtual-ground array architecture is realized to greatly improve program disturbs as compared with conventional and-type configuration. A fully self-aligned process with shallow trench isolation in cell array is also proposed for the first time to fabricate this word-line shared split-gate structure without any lithomisalignment issue. Moreover, the negative charge trap in select gate (SG) oxide during conventional poly-to-poly Fowler-Nordheim tunneling erase operation is found as an important contribution to the cycling degradation for cells with thin SG oxide, and a negative control gate bias erase scheme is then presented to enhance the endurance reliability in this paper. A 250-°C baking experiment (before and after cycling) is performed to explore this cell's data retention characteristics, proving the free of extrinsic and intrinsic defect. Erase and program characteristics are comparable with conventional split-gate cell as well.
Sponsorship	IEEE Electron Devices Society
Starting Page	2350
Ending Page	2356
Page Count	7
File Size	1643137
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microprocessors Arrays Logic gates Ash Split gate flash memory cells Junctions virtual-ground. 2-bits/cell flash memory Fowler--Nordheim (FN) tunneling metal interconnect (MIC) self-aligned source side injection (SSI) split-gate virtual-ground Fowler-Nordheim (FN) tunneling
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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