NDLI: A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

Content Provider	IEEE Xplore Digital Library
Author	Wen-Jer Tsai Huang, J.S. Ping-Hung Tsai Yan, S.G. Cheng-Hsien Cheng Cheng, C.C. Yin-Jen Chen Chih-Hsiung Lee Tzung-Ting Han Tao-Cheng Lu Kuang-Chao Chen Chih-Yuan Lu
Copyright Year	1963
Abstract	A novel low-voltage low-power programming method for NAND Flash cell is presented. By utilizing the self-channel boosting technique, a sufficiently high local field is established in a NAND string that causes efficient hot-carrier injection. This method has been successfully demonstrated in the 75-nm-node floating-gate NAND cells, along with comprehensive studies on bias and timing effects. Requirements for high-voltage supporting devices, circuitry, and process in conventional Fowler-Nordheim programmed NAND cells are greatly mitigated. It would be very attractive for scaled NAND Flash technology in the future.
Sponsorship	IEEE Electron Devices Society
Starting Page	1620
Ending Page	1627
Page Count	8
File Size	1603734
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Computer architecture Microprocessors Electric potential Programming Heating Boosting Flash memory source-side injection Disturb Fowler–Nordheim (FN) tunneling hot-carrier injection nand Flash nonvolatile memory self-channel boosting
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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