NDLI: Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Min Li Lei Zhou Weijing Wu Jiawei Pang Jianhua Zou Junbiao Peng Miao Xu
Copyright Year	1963
Abstract	In this paper, we propose a dual gate thin-film transistor (TFT) based on anodic aluminum oxide gate dielectrics and investigate the top gate (TG) effect on device performance. It is shown that the threshold voltage of TFTs could been linearly modulated with respect to the applied TG voltage due to the modification of vertical electric field distribution between the bottom gate and top gate. In addition, the introduction of top gate would lead to the asymmetric control of threshold voltage modulation by the variation of bottom gate-dielectric and TG-dielectric, which makes it attractive in the TFT fabrication for intensive use. Moreover, the additional TG can provide an effective light shielding that guarantee the electrical reliability of TFTs under negative bias illumination stress with only -0.37 V shift of threshold voltage after 9000 s. Owning to its linear controllability of threshold voltage, it is believed that the dual-gate structure will be tentatively introduced in the application of compensation pixel circuit.
Sponsorship	IEEE Electron Devices Society
Starting Page	2448
Ending Page	2453
Page Count	6
File Size	1657596
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Threshold voltage Dielectrics Aluminum oxide Thin film transistors threshold voltage. Compensation pixel circuit dual gate linearly modulated stability thin-film transistors (TFTs) threshold voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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