NDLI: Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs

Content Provider	IEEE Xplore Digital Library
Author	Ghosh, R.K. Brahma, M. Mahapatra, S.
Copyright Year	1963
Abstract	We investigate the electronic properties of Germanane and analyze its importance as 2-D channel material in switching devices. Considering two types of morphologies, namely, chair and boat, we study the real band structure, the effective mass variation, and the complex band structure of unstrained Germanane by density-functional theory. The chair morphology turns out to be a more effective channel material for switching devices than the boat morphology. Furthermore, we study the effect of elastic strain, van der Waals force, and vertical electric field on these band structure properties. Due to its very low effective mass with relatively high-energy bandgap, in comparison with the other 2-D materials, Germanane appears to provide superior performance in switching device applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	2309
Ending Page	2315
Page Count	7
File Size	3941805
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Effective mass Photonic band gap Boats Materials Morphology Tensile strain tunnel field-effect transistor (TFET). 2-D crystal ab initio simulation effective mass MOSFET real and complex band structure tunnel field-effect transistor (TFET)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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