NDLI: Impact of Current Filaments on the Material and Output Characteristics of GaAs Photoconductive Switches

Content Provider	IEEE Xplore Digital Library
Author	Cheng Ma Wei Shi Mengxia Li Huaimeng Gui Nana Hao Pengbo Xue
Copyright Year	1963
Abstract	The current filament phenomena in high gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) always draw a significant influence on the lifetime of the devices. This paper presents a study on the influence of the current filament over the material properties and output characteristics of the GaAs PCSS. The working principle of the current filaments has been analyzed and it is shown that the performance of GaAs PCSS degrades due to the heating effects of the current filaments. It is observed that the heating effect of current filament reduces the dark resistivity of the GaAs material; furthermore, it gradually damages electrode of PCSS, leading to the breakdown of PCSS. This paper presents the relationship between the turn-ON process and damage of the PCSS.
Sponsorship	IEEE Electron Devices Society
Starting Page	2432
Ending Page	2436
Page Count	5
File Size	1551515
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Optical switches Electric breakdown Conductivity Heating Electrodes semiconductor. Current filaments EL2 level gallium arsenide (GaAs) semiconductor
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Temperature-Dependence of High-Gain Operation in GaAs Photoconductive Semiconductor Switch at 1.6 $mu text{J}$ Excitation

Characteristics Of Current Filaments In GaAs Photoconductive Semiconductor Switches

Studies Of Breakdown In Photoconductive GaAs Switches

2-kV and 1.5-kA Semi-Insulating GaAs Photoconductive Semiconductor Switch

Photoconductive Semiconductor Switch for Microwave Applications

Photoconductive semiconductor switch experiments for pulsed power applications

Recovery of high-field GaAs photoconductive semiconductor switches

Current filamentation in bulk GaAs photoconductive semiconductor switches

Polycrystalline cubic silicon carbide photoconductive switch

Impact of Current Filaments on the Material and Output Characteristics of GaAs Photoconductive Switches

Similar Documents

Temperature-Dependence of High-Gain Operation in GaAs Photoconductive Semiconductor Switch at 1.6 $mu text{J}$ Excitation

Characteristics Of Current Filaments In GaAs Photoconductive Semiconductor Switches

Studies Of Breakdown In Photoconductive GaAs Switches

2-kV and 1.5-kA Semi-Insulating GaAs Photoconductive Semiconductor Switch

Photoconductive Semiconductor Switch for Microwave Applications

Photoconductive semiconductor switch experiments for pulsed power applications

Recovery of high-field GaAs photoconductive semiconductor switches

Current filamentation in bulk GaAs photoconductive semiconductor switches

Polycrystalline cubic silicon carbide photoconductive switch

Impact of Current Filaments on the Material and Output Characteristics of GaAs Photoconductive Switches