NDLI: High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device

Content Provider	IEEE Xplore Digital Library
Author	Yi-Ruei Jhan Yung-Chun Wu Hsin-Yi Lin Min-Feng Hung Yu-Hsiang Chen Mu-Shih Yeh
Copyright Year	1963
Abstract	This paper demonstrates a silicon-oxide-nitrideoxide-silicon (SONOS) nonvolatile memory (NVM) with fin-shaped polycrystalline silicon channel tunnel field-effect transistor (TFET). It differs from other memory devices in that its programming mechanisms include Fowler-Nordheim (FN) tunneling, channel hot-electron (CHE) injection, and band-toband tunneling-induced hot electron (BBHE) in single memory cell. In FN programming, both the ON-state current and the program/erase (P/E) operations are based on quantum tunneling. For FN tunneling, when a VG of 17 V is applied for only 1 ms, this device has a large threshold voltage shift (ΔVTH) of 4.7 V. The fin-shaped TFET SONOS (T-SONOS) NVM exhibits superior endurance of 88% after 10⁴ P/E cycles. The memory window remains 65% of its original value after 10 years at a high temperature of 85 °C. On the other hand, the device exhibits better endurance of 74% for CHE programming and BBHE programming after 104 P/E cycles. The memory window retains 81% in CHE programming and 65% in BBHE programming after 10 years. The fin-shaped T-SONOS NVM exhibits high performance that can be achieved in polycrystalline silicon NVM.
Sponsorship	IEEE Electron Devices Society
Starting Page	2364
Ending Page	2370
Page Count	7
File Size	3011387
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nonvolatile memory Tunneling Programming Channel hot electron injection Logic gates SONOS devices Charge carrier processes tunnel field-effect transistor (TFET). Band-to-band tunneling-induced hot electron (BBHE) channel hot-electron (CHE) injection fin-shaped Fowler-Nordheim (FN) tunneling nonvolatile memory (NVM) tunnel field-effect transistor (TFET)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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