NDLI: Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>+</sup>Si-HfO<sub>2</sub>

Content Provider	IEEE Xplore Digital Library
Author	Dongyi Lu Yadong Zhao Tran Xuan Anh Yu Hong Yu Daming Huang Yinyin Lin Shi-Jin Ding Peng-Fei Wang Ming-Fu Li
Copyright Year	1963
Abstract	The area, temperature (160-300 K), and bias polarity dependences of the I-V curves of the self-rectifying n⁺Si-HfO₂-Ni resistance random access memory (RRAM) have been measured systematically. The complementary nonrectifying p⁺Si-HfO₂-Ni RRAM I-V data are also provided for reference. To explain all experimental data, three resistances in series in the RRAM device: 1) the Si-HfO₂ contact resistance R_Si-HfO; 2) the HfO₂ dielectric resistance R_HfO; and 3) the HfO₂-Ni contact resistance R_HfO-Ni must be considered on an equal footing. Previously reported first principle calculation results for the density of states of the monoclinic HfO₂ grain boundary with high and low densities of oxygen vacancyV_O⁰ are adopted for describing the conductive filament resistance R_HfO of the dielectric at low- and high-resistance states. The temperature dependence of I-V is controlled by three different energy barriers: Schottky-like barrier, multiphonon trap assisted tunneling barrier, and multiphonon deep trap capture barrier (E_CAPTURE). It is demonstrated that all experimental data can be explained in a natural and unified way. This model is valuable not only for understanding the conduction mechanism, but also for guiding the future self-rectifying RRAM technology development.
Sponsorship	IEEE Electron Devices Society
Starting Page	2294
Ending Page	2301
Page Count	8
File Size	2467758
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hafnium compounds Silicon Dielectrics Temperature dependence Nickel Electrodes Current measurement self-rectifying characteristic. HfO₂ dielectric multiphonon trap assisted tunneling (MPTAT) resistance random access memory (RRAM) self-rectifying characteristic HfO2 dielectric
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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