NDLI: A Theory of Multiplication Noise for Electron Multiplying CMOS Image Sensors

Content Provider	IEEE Xplore Digital Library
Author	Brugière, T. Mayer, F. Fereyre, P. Dominjon, A. Barbier, R.
Copyright Year	1963
Abstract	An electron multiplying CMOS images sensor (emCMOS) enables electron multiplication inside the pixel by the use of high voltage (hv) phase(s) under gate(s). Different possible implementations of hv gates dedicated to impact ionization require specific multiplication patterns and therefore new excess noise formulation. This paper presents a rigorous mathematical approach to the calculation of the excess noise factor for all electron multiplying CMOS pixel structures in the framework of the branching processes and the compounding theorem of the probability generating function. Validation of the model is performed by computing the variance formula for one pixel structure and its corresponding Monte Carlo simulation of the stochastic processes. The signal over noise ratio including the readout noise, SNR_ro, is introduced to evaluate the possible extreme low light imaging performance as a function of the multiplication parameters.
Sponsorship	IEEE Electron Devices Society
Starting Page	2412
Ending Page	2418
Page Count	7
File Size	1017300
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise Logic gates Monte Carlo methods Photodiodes Mathematical model Impact ionization CMOS image sensors excess noise factor (ENF). CMOS image sensor (CIS) electron multiplication electron multiplying CMOS (emCMOS) excess noise factor (ENF)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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