NDLI: Solution-Processed Indium–Zinc-Oxide Thin Film Transistors With High-<inline-formula> <tex-math notation=TeX>$k$ </tex-math></inline-formula> Magnesium Titanium Oxide Dielectric

Content Provider	IEEE Xplore Digital Library
Author	Zhao Yang Haifeng Pu Can Cui Li Zhang Chengyuan Dong Qun Zhang
Copyright Year	1980
Abstract	In this letter, magnesium-titanium oxide (MTO) thin films were prepared through a solution-processing method. Variation of permittivity, leakage properties, and optical bandgap of the MTO thin films with different Ti content were investigated. The amorphous indium-zinc oxide thin-film transistors (TFTs) using Mg_0.6Ti_0.4O as gate dielectric exhibited a small subthreshold swing of 0.32 V/decade, moderate field-effect mobility of 3.41 cm²/Vs, low threshold voltage of -0.9 V, and large ON/OFF current ratio of ~ 6×10⁶. These results demonstrate the potential application of solution-processed MTO thin films as a promising gate dielectric layer in oxide-TFTs.
Sponsorship	IEEE Electron Devices Society
Starting Page	557
Ending Page	559
Page Count	3
File Size	649467
File Format	PDF
ISSN	07413106
Volume Number	35
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectrics Logic gates Thin film transistors Permittivity Leakage currents Photonic band gap thin-film transistors (TFTs). Dielectric layer indium-zinc-oxide (IZO) magnesium-titanium-oxide (MTO) magnesium doping thin-film transistors (TFTs) indium¿zinc-oxide (IZO) magnesium¿titanium-oxide (MTO)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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