NDLI: Ballistic Transport Performance of Silicane and Germanane Transistors

Content Provider	IEEE Xplore Digital Library
Author	Kain Lu Low Wen Huang Yee-Chia Yeo Gengchiau Liang
Copyright Year	1963
Abstract	The ballistic transport performance of field-effect transistor (FET) based on hydrogenated silicene and germanene, i.e., silicane and germanane, respectively, is examined. The electronic band structures of silicane and germanane are investigated using the first-principles density functional theory. Subsequently, the ballistic performance of FETs is evaluated via the semiclassical ballistic transport model. We find that silicane n-MOSFET offers a relatively better ON-current performance than transistors made of germanane and 2-D transition metal dichalcogenides (2-D-TMDs) (MoS₂, MoSe₂, WS₂, and WSe₂). Germanane n-MOSFET suffers from the issue of low density of states due to its smaller electron effective mass. P-FETs based on germanane and silicane have higher ON-current than those of 2-D-TMDs p-FETs. Further investigation on other aspects of silicane and germanane MOSFETs, such as gate leakage and contact resistance, is needed to comprehensively assess their overall performance metrics.
Sponsorship	IEEE Electron Devices Society
Starting Page	1590
Ending Page	1598
Page Count	9
File Size	3038196
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Materials Ballistic transport Effective mass Performance evaluation Photonic band gap MOSFET silicane. germanane hydrogenated silicene and germanane silicane
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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